Research Associate
Indian Institute of Technology Delhi
Job Description
I am looking for motivated candidates to join our project on InP-based HEMT devices for THz applications at IIT Delhi.
We are hiring for two Research Associate (RA) positions:1. Research Associate (Project lead) - Coordination between design, fabrication and dc-rf measurement team.For candidates with experience in semiconductor/nanoelectronic device design, fabrication experience, device characterization experience, RF/microwave measurements, TCAD, or device modelling.2. Research Associate - TCAD Design of InP HEMT Epilayer, device and modelingFor candidates interested in TCAD-based design and optimization of InP HEMT multilayer epilayer structures and device geometry, with corresponding experience.
PhD (submitted) or MTech with 3 year reaserch experience preferred in both cases.
This is an exciting opportunity to work on III-V semiconductor devices, THz electronics, high-frequency measurements and indigenous technology development.Interested candidates may apply through the advertisement link below, mail reume on :
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